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| MMBD1401 / 1403 / 1404 / 1405 Discrete POWER & Signal Technologies MMBD1401 / 1403 / 1404 / 1405 3 1401 CONNECTION DIAGRAMS 3 3 1403 3 1 29 2 1 2 NC 3 1 3 2 1404 1405 2 SOT-23 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25C unless otherwise noted Parameter Value 175 200 600 700 1.0 2.0 -55 to +150 150 Units V mA mA mA A A C C Tstg TJ Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max MMBD1401/1403/1404/1405* 350 2.8 357 Units mW mW/C C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 a 1997 Fairchild Semiconductor Corporation MMBD1401 / 1403 / 1404 / 1405 High Voltage General Purpoise Diode (continued) Electrical Characteristics Symbol BV IR VF TA = 25C unless otherwise noted Parameter Breakdown Voltage Reverse Current Forward Voltage Test Conditions IR = 100 A VR = 120 V VR = 175 V IF = 10 mA IF = 50 mA IF = 200 mA IF = 300 mA VR = 0, f = 1.0 MHz IF = IR = 30 mA, IRR = 1.0 mA, RL = 100 Min 200 Max 40 100 800 920 1.0 1.1 2.0 50 Units V nA nA mV mV V V pF nS 760 CO TRR Diode Capacitance Reverse Recovery Time Typical Characteristics IR - REVERSE CURRENT (nA) REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA V VRR - REVERSE VOLTAGE (V) REVERSE CURRENT vs REVERSE VOLTAGE IR - 55 to 205 V 50 40 30 20 10 0 55 75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V) Ta= 25C 325 Ta= 25C 300 275 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature REVERSE CURRENT vs REVERSE VOLTAGE IR - 180 to 255 V IIR - REVERSE CURRENT (nA) R FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA VF - FORWARD VOLTAGE (mV) F V 100 90 80 70 60 50 40 30 20 180 200 220 240 VR - REVERSE VOLTAGE (V) 255 Ta= 25C 450 400 350 300 250 1 Ta= 25C GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 MMBD1401 / 1403 / 1404 / 1405 High Voltage General Purpoise Diode (continued) Typical Characteristics (continued) FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA V F V F - FORWARD VOLTAGE (mV) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA V VFF - FORWARD VOLTAGE (mV) 725 Ta= 25C 700 650 600 550 500 450 0.1 1.4 1.3 1.2 1.1 1 0.9 0.8 Ta= 25C 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 0.7 10 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500 800 Forward Voltage vs Ambient Temperature VF - 1.0 uA - 10 mA (-40 to + 80 Deg C) V VFF - FORWARD VOLTAGE (mV) CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V 1.3 Ta= 25C 800 Ta= -40C CAPACITANCE (pF) 1.2 1.1 1 0.9 0.8 600 Ta= 25C 400 Ta= +80C 200 0.001 0.003 0.01 0.03 0.1 0.3 1 I F - FORWARD CURRENT (mA) 3 10 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 REVERSE RECOVERY TIME vs REVERSE RECOVERY CURRENT (Irr) REVERSE RECOVERY (nS) 50 500 I - CURRENT (mA) 400 300 200 100 0 Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (T A ) IR -F OR WA RD 40 CU RR EN TS 30 IF = IR = 30 mA Rloop = 100 Ohms Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA TE AD 20 1 1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA) 3 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) MMBD1401 / 1403 / 1404 / 1405 High Voltage General Purpose Diode (continued) Typical Characteristics (continued) POWER DERATING CURVE 500 PD - POWER DISSIPATION (mW) 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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